Use of Ti/WNx/Ti/Cu multilayer as thin metal system for copper-airbridged GaAs LN-PHEMTs
碩士 === 國立交通大學 === 材料科學與工程系所 === 92 === In this work, a new multilayer Ti/WNx/Ti/Cu thin metal system was used for the study of copper-airbridged GaAs devices. The attempt is to find a reliable diffusion barrier structure with good adhesion for copper metallization of GaAs devices in order to reduce...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58s8e6 |