Characterization of Off-State Conduction Mechanisms of Schottky Devices
碩士 === 國立交通大學 === 電子工程系 === 92 === Recently, we fabricated and demonstrated new devices, called SB-TFT with FID (Field-Induced Drain) and SB-SOI FinFET with S/D extensions. These devices were used metallic silicide Schottky source/drain in lie of the highly doped S/D in the conventional M...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/11301432252913806883 |