Electrical and Physical Characteristics of MOD and Sputter Deposited Strontium Bismuth Tantalate Films for NV-FRAM Applications
博士 === 國立交通大學 === 電子工程系 === 92 === Recently, the one-transistor ferroelectric random access memory (1T FeRAM) has gained intensive interest because it can provide very high-density non-volatile memories with non-destructive read-out operation. The 1T FeRAM is composed of the ferroelectric...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50126554067890514552 |