Study of AlGaN/GaN Metal-Oxide-Heterostructure FET with a Liquid Phase Deposited Oxide as Gate Dielectric
碩士 === 國立成功大學 === 電機工程學系碩博士班 === 92 === An efficient and low cost approach for depositing uniform silicon dioxide layers on GaN by liquid phase deposition (LPD) that is near room temperature will be described. The deposited rate of SiO2 is about 55nm/hr. at 40 ℃. Breakdown electric field as high a...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98337952195127127988 |