GaN on Si (111) Grown by Metalorganic Vapor phase Epitaxy (MOVPE) and Fabrication of Quantum Dot Photodetectors
碩士 === 國立成功大學 === 電機工程學系專班 === 92 === GaN films were grown on Si(111) substrates by home made MOVPE system using a vertical reactor. The low-temperature AlN buffer layer,30 nm in thickness, was grown on 7000C. The high temperature GaN films were grown at 10600C. XRD observation showed that the fil...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31788935481694689353 |