Fabrication of High Breakdown Voltage SiC Schottky Barrier Diodes with Novel Edge Termination Designs
碩士 === 國立成功大學 === 微電子工程研究所碩博士班 === 92 === In this thesis, the design and fabrication of high voltage 4H-SiC Schottky barrier diodes (SBDs) with various edge termination (ET) designs is presented. Two-dimensional simulation to investigate the effects of floating metal ring (FMR) and resistive Schot...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/42993094741461277657 |