| Summary: | 碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 92 === The application of the semiconductor devices were seriously effected by the dielectric property between coating layers and the metal-conduct-line. Interconnect delay is a factor of performance limiting for ULSI circuits when feature size is scaled to deep sub-micron region. Using low dielectric constant materials for the interlayer insulator is an effective way to solve the RC time delay. Diamond-like carbon ( DLC ) film is an amorphous film with many properties such as high hardness, low friction coefficient , high thermal conductivity, high electric resistance and high infrared transparency, etc. Therefore, DLC can be applied to mechanics, optical industry and semi-conductor components.
DLC have been the subject of research for the last two decades due to their important electrical and mechanical properties. Such as its dielectric constant is 2.7~3.8 ( SiO2 =4.0, Si3N4=8, Si=11.9, Diamond=5.6 ), by doping Cl ions to form the Cl-containing diamond like carbon ( CLDLC ) during the chemical vapor deposited process. The dielectric constant can be reduced to under 2.8. This low-k material can be used as the passive layer in the VSLI process. This study will deposit the DLC film by the PECVD method. And using the ion implanting with high dosage of ion ( Ar, N and C ) to modify the surface of the DLC film. The aim of this plan is to investigate the effects of those ions implantation on the structure and dielectric constant of the DLC film.
The results reveal that the implanted with Ar or N leads to graphitization, and have higher dielectric constant. With C element implanted, the dielectric constant have been reduced and it have more SP3 structure.
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