High-Density-Plasma Etch of Group-Ⅲ Nitrides and Its Application for Sapphire Wafer Reclaim
碩士 === 國立中興大學 === 材料工程學研究所 === 92 === This thesis describes the etching characteristics of GaN by inductively coupled plasma (ICP) and the effects of process parameters such as ICP source power, rf chuck power, chamber pressure and gas flow rate is investigated. It was found that the ICP...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/13283408602582086041 |