| Summary: | 碩士 === 崑山科技大學 === 機械工程研究所 === 92 === The effect of heat treatment in various hydrogen flows on the electrical and optical properties of indium tin oxide (ITO) films has been investigated. The ITO films were heat treatment in hydrogen or mixd hydrogen and nitrogen .The chamber of heat treatment was evacuated to a background pressure 2.5×E-5 torr before annealing. Annealing decreased the resistivity up to heat treatment of 500℃ mix hydrogen with nitrogen. The lowest resistivity attain was 29.32E-4 W·cm , annealing at 500℃ were introduce hydrogen and nitrogen gases into chamber with 6sccm and 6sccm flows. The cause of decreased resistivity of indium tin oxide films were hydrogen result in oxygen vacancy donors prvide the charge carriers for conduction. The ITO films with transparency above 85﹪within the visible wavelengths 400~800 nm, was obtained after heat treatment at 500℃ introduce hydrogen and nitrogen gases into chamber with 6sccm and 6sccm flows. The ITO films high transparency were due to hydrogen results in oxygen vacancy increased carrier concentration, that the lowest states in the conduction band are filled by excess charge carriers as the Moss-Burstein effect. The X-ray diffraction intensity of the (222) plane of indium tin oxide increased, and annealing with increase hydrogen gases flows. ITO films with a root mean square roughness of 3.861 nm over an area of 600×600 nm were obtained at the mixed hydrogen and nitrogen with 500℃ annealing.
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