Theoretical Analysis of the MOS-NDR Devices
碩士 === 崑山科技大學 === 電子工程研究所 === 92 === In this work, we study the NDR (negative differential resistance) devices about 3 to 7of MOSFETs, Bipolar transistors and resistances constituted a NDR device. Theoretical analyses are based on semiconductor devices physics. The analyses proceed with transistor a...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/awg8j5 |