Influence of Low Temperature AlGaN Intermediate Layers on the Properties of GaN Films
碩士 === 逢甲大學 === 光電物理研究所 === 92 === Abstract The purpose of this study is to explore the effect of LT-AlXGa1-XN interlayers on the high temperature-grown GaN films. The III-nitride films were grown on (0001) sapphire substrates by atomic layer epitaxy (ALE). Groups III metalorganics and NH3 were use...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93872811789871032874 |