Atomic Flat ZnSe Epilayer Grown by Molecular Beam Epitaxy
碩士 === 中原大學 === 應用物理研究所 === 92 === Abstract Flat ZnSe epilayers were grown on GaAs (001) substrate by molecular-beam epitaxy (MBE). Surface roughness was studied for the ZnSe epilayers grown at different growth thickness and temperature. In addition, the effect of chemical etching and thermal de-s...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/bmgpdm |