Photoluminescence studies of InGaN/GaN mulitiple-quantum-well LEDs
碩士 === 中原大學 === 應用物理研究所 === 92 === Abstract In this thesis, we present the photoluminescence（PL）properties of InGaN/GaN multiple-quantum-well LEDs. It is found the linewidth of PL can be reduced by rapid thermal annealing（RTA）, leading to improve the quality of the sample. Also as the RTA temperatur...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78304591685133730783 |