Fabrication and Characterization of AlGaN p-i-n Ultraviolet Photodetectors
碩士 === 中原大學 === 電子工程研究所 === 92 === The dissertation, involved the fabrication and characterization of AlxGa1-xN p-i-n photodetectors (0<x<0.3) that grown on the sapphire by low-pressure metalorganic chemical vapor deposition. The electrical properties of AlxGa1-xN based p-i-n photodetectors we...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17664248706522318798 |