微機電壓力感測器電路設計分析與測試

• Main Author: 陳俊良
• Other Authors: 林君明
• Format: Others
• Language: zh-TW
• Published: 2004
• Online Access: http://ndltd.ncl.edu.tw/handle/64554913581838873021

碩士 === 中華大學 === 機械與航太工程研究所 === 92 === Abstract The purpose of this research is to design a circuit for silicon pressure sensors made by MEMS technology. The sensors are made by piezo-resistance elements in a form of Wheatstone bridge on a deformable membrane. The output voltage is delivered when pressure difference exits on the two side of the silicon membrane. The differential voltage is amplified through an instrumentation amplifier and them fed to a A/D converter to become digital signal for the subsequent micro-controller treatment. The circuit is designed to have temperature compensation function, so that the sensitivity and measurement error can be reduce. This is especially important to bless pressure measurement instrument. Two kind of bias circuits, constant voltage and constant current types, induce different temperature coefficients, and has i/o be compensate excecually. In real experiment, two types from two uendore comparison, one with DIP, the others with COB package. The temperature effects and others problems are compared and discussed in defails in the reports.