Characteristics of Fluorine Incorporated HfO2 Gate Dielectrics
碩士 === 長庚大學 === 電子工程研究所 === 92 === According to the technology roadmap, the standard CMOS gate oxide material which has served the industry so long with high performance and good reliability will be changed when the process technology continue to scale down. Copper will replace Al-alloy,...
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| Format: | Others |
| Language: | en_US |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/51147987249832671906 |