Characterization and Mechanism Studies of Endurance and Data Retention Reliability in BiAND Flash Memory
碩士 === 長庚大學 === 電子工程研究所 === 92 === Recently, the flash memory has become one of the mainstream of nonvolatile semiconductor memory product, which has been widely used for mass data storage. In the past, for the design of advanced flash memories, low power consumption is a major concern. A...
Main Authors: | Yo Chong Lin, 林佑聰 |
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Other Authors: | C. S. Lai |
Format: | Others |
Language: | en_US |
Published: |
2004
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Online Access: | http://ndltd.ncl.edu.tw/handle/82791338541097276380 |
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