Characterization and Mechanism Studies of Endurance and Data Retention Reliability in BiAND Flash Memory

碩士 === 長庚大學 === 電子工程研究所 === 92 === Recently, the flash memory has become one of the mainstream of nonvolatile semiconductor memory product, which has been widely used for mass data storage. In the past, for the design of advanced flash memories, low power consumption is a major concern. A...

Full description

Bibliographic Details
Main Authors: Yo Chong Lin, 林佑聰
Other Authors: C. S. Lai
Format: Others
Language:en_US
Published: 2004
Online Access:http://ndltd.ncl.edu.tw/handle/82791338541097276380