Characteristic of Ⅲ-Nitride light emission diode buffer layer on Si substrate
碩士 === 長庚大學 === 光電工程研究所 === 93 === GaN epitaxial substrates are mainly on sapphire and SiC. Since sapphire or SiC has many disadvantages such as cost a lot of money, difficult to grow high quality large size bulk substrate, some scientists try to grow the high-quality GaN film on silicon. Actually,...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2004
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| Online Access: | http://ndltd.ncl.edu.tw/handle/99817776135275497995 |