The Application of Ozone Water on the Semiconductor Cleaning

• Main Author: 楊瑞紋
• Other Authors: 陳適範
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/64538522037060026837

碩士 === 國立臺北科技大學 === 材料及資源工程系碩士班 === 91 === In semiconductor manufacturing, the cleaning is an important process. It has big influences on device characteristics. The traditional cleaning process is RCA cleaning. It includes several main steps and each has its function. For example, the H2SO4 and H2O2 are used to remove the organic contaminations. In SC1, the NH4OH and H2O2 are adopted to remove the particles and in SC2, the HCl and H2O2 are used to remove the metal contaminations The HF solution removes the native oxide. In the RCA cleaning process, it uses many chemical solutions and large of DI-water. Also the conventional RCA cleaning is a high temperature process. So, we developed a novel cleaning process, which can be used in room temperature and decrease the consumption of chemical solutions and DI-water. Due to the strong oxidation ability, the ozone water can remove the organic contaminations, particles and metal ions. The most important feature is that the ozone water can be used in room temperature. In this investigation, we proposed the ozone water cleaning to replace the conventional RCA cleaning. The process uses the ozone water and the HF solution to clean the wafer surface. To realize the influences of ozone water cleaning to wafer, we change the concentration and pH value of ozone water in cleaning process. From Atomic Force Microscope (AFM) roughness observation, the cleaning procedure of ozone water shows better roughness than RCA cleaning. Besides, in order to analyze the removal efficiency of organic contamination by ozone water, we use the surfactant (TritonX-100), which often used in semiconductor manufacturing, as the origin of organic contamination. The wafers will be contaminated by surfactant (TritonX-100) and then cleaned by ozone water. The thermal-desorption system-atomospheric pressure ionized mass spectrum (TDS-APIMS) was used to analyze the organic contamination. The results show that the cleaning process of ozone water has better performance and can effectively remove the organic contaminant residual. According to our research results, the ozone water cleaning has smoother roughness than conventional RCA cleaning. In the removal of organic contaminations, the ozone water has better cleaning efficiency. When the roughness and contamination of wafer surface will be required strictly in the future nano-device regime, the ozone water cleanings can replace the conventional RCA cleaning and it .will provide the best cleaning efficiency of device.