| Summary: | 碩士 === 中國文化大學 === 材料科學與製造研究所 === 91 === In this project, a numerical model of plasma sputtering was designed and simulated with CFD-ACE+ under various conditions. The target of this research was to find the optimum sputtering deposition conditions and the model was modified compared with the experimental measurement.
In this work, many experiment operation parameters, which are vacuum chamber size, units, DC or RF power generator, powers, operation pressures, various target compositions, distance between sample and target and electrode design, were used to design the thin film by using CFD simulation assistant with the plasma sputtering technology. From the results of designed numerical model, the distribution of internal pressure is uniformed. Under a 1eV potential difference condition, the degree of ionization and ion density are 10-3-10-4 and 1011-1012, respectively.
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