Modulation spectroscopy study of AlGaN films and ZnO nanorods
碩士 === 國立臺灣科技大學 === 電子工程系 === 91 === The optical properties of Al0.27Ga0.73N thin film grown on GaN by MOCVD have been characterized by contactless electroreflectance (CER) measurements in the temperature range of 15K∼300K. The quality of AlGaN films related to the growth temperature of t...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/42943076140725928718 |
| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 91 === The optical properties of Al0.27Ga0.73N thin film grown on GaN by MOCVD have been characterized by contactless electroreflectance (CER) measurements in the temperature range of 15K∼300K. The quality of AlGaN films related to the growth temperature of the AlN stained buffer layer is studied. The temperature dependent excitonic transitions are analyzed by Varshni and Bose-Einstein equations. The parameters that describe the temperature variation of excitonic transitions of Al0.27Ga0.73N/GaN films are evaluated and discussed.
Furthermore, we have also characterized the optical properties of ZnO nanorods with different diameter grown on silicon and fused silica substrates by using piezoreflectance (PzR) and reflectance (R) measurements. The relation between band gap and the diameter of ZnO nanorods has been observed. The temperature dependent reflectance spectra show illustrated A、B and C excitonic transitions of ZnO nanorods. The temperature effects on transition energy for the ZnO nanorods are discussed.
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