Metalorganic Chemical Vapor Deposition of Copper Using Cu(Ⅱ)[OCMe(CF3)CH2NHBui]2

• Main Authors: Liu Meng Jung, 劉孟容
• Other Authors: 蔡大翔
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/00659191567563556420

碩士 === 國立臺灣科技大學 === 化學工程系 === 91 === We have investigated the copper chemical vapor deposition at 230-280C using Cu[OCMe(CF3)CH2NHBui]2 as precursor. The growth behaviors with and without indium additive in the initial period and the afterwards period are studied, using scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. The initial growth period On the TaN/SiO2/Si substrate, after 12-minute deposition, the Cu grain size increases with the growth temperature; 230C (84.1 nm), 260C (99.4 nm), 280C (127 nm). And the fraction of area being covered by Cu grains at 260C (25.1%) is higher than the other two, i.e., 230C (8.2%) and 280C (11.8%). On the In/TaN/SiO2/Si substrate, after 12-minute deposition, the Cu grain size increases a great deal when the temperature increases from 230C (43.3 nm) to 260C (54 nm), but only a little as the temperature increases from 260C (54 nm) to 280C (57.6 nm). And the fraction of area being covered by Cu grains again is higher at 260C (92%) than the other two temperatures, 230C (87.6%) and 280C (38.5%). The sputtered indium begins to desorb when the growth temperature is raised to 280C. On the Cu/TaN/SiO2/Si substrate, after 12-minute deposition, the Cu grain size increases with the growth temperature; 230C (91.2 nm), 260C (110 nm), 280C (177.9 nm). But the fraction of area being covered by Cu grains decreases with the increasing growth temperature; 230C (69.8%), 260C (52.8%), 280C (26.5%). The growth mode of Cu CVD on these three substrates is Volmer-Weber type. The Cu grains stand up on the surface like balls. The growth mode is the reason why the surface roughness of CVD copper thin film is that high. The continuous thin film After 60-minute deposition, only the deposition on In/TaN/SiO2/Si substrate can reach a continuous film. After 180-minute deposition, the impurities on In/TaN/SiO2/Si substrate are least at 260C. XPS results show that indium is on the Cu surface, probably because indium has been evaporated and re-adsorbed on the surface. Since indium is evaporated at 280C and readorbed, the surface content of indium is the least at 280C. The sheet resistivity of Cu CVD thin film on In/TaN/SiO2/Si substrate is the lowest at 260C, 2.94µΩ-cm 