Metalorganic Chemical Vapor Deposition of Copper Using Cu(Ⅱ)[OCMe(CF3)CH2NHBui]2
碩士 === 國立臺灣科技大學 === 化學工程系 === 91 === We have investigated the copper chemical vapor deposition at 230-280C using Cu[OCMe(CF3)CH2NHBui]2 as precursor. The growth behaviors with and without indium additive in the initial period and the afterwards period are studied, using scanning electro...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00659191567563556420 |