Ge Quantum Dot Infrared Photodetector with Schottky Barrier to Block Dark Current
碩士 === 國立臺灣大學 === 電子工程學研究所 === 91 === We have observed intraband absorption in Ge/Si self-assembled quantum dots. Ge self-assembled quantum dots in Si matrix grown on P-Si(100) substrate have been fabricated using Stranski-Krastanov growth mode. The dot structure is grown using UHV/CVD sy...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59921741111112272812 |