Studies on Hot-Carrier effects in High-Voltage Lateral-Diffused MOSFETs

博士 === 國立清華大學 === 電子工程研究所 === 91 === In this thesis, we present a new reverse transconductance method to investigate hot-carrier degradation on high-voltage (HV) lateral-diffused metal-oxide-semiconductor field-effect transistors (LDMOSFETs). This new method can extract asymmetric drain and source s...

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Bibliographic Details
Main Authors: Shih-hui Chen, 陳詩蕙
Other Authors: Jeng Gong
Format: Others
Language:en_US
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/95723175179307785343