Study on High Linearity High Gain SiGe BiCMOS Power Amplifier
碩士 === 國立清華大學 === 電子工程研究所 === 91 === In this thesis, a 2.4 GHz ISM band class AB RF power amplifier was implemented with tsmc 0.35μm SiGe BiCMOS technology. The designed linear gain, output 1dB gain compression point and power added efficiency (PAE) are above 30 dB, 27dBm and 30% respecti...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41007293754889555950 |