The Electrical Properties of Zirconium Oxide ZrO2 Thin Film Capacitor and Metal-ZrO2-Semiconductor Field Effect Transistors
碩士 === 國立清華大學 === 電子工程研究所 === 91 === In this work, the electrical characteristics of Au/ZrO2/Silicon(P-type) (MIS) capacitors and n-channel metal gate metal-oxide-semiconductor field effect transistors (MOSFET) with ZrO2 gate dielectric are investigated. The ZrO2 thin films are deposited by magnetro...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60947781879574973620 |