Endpoint Detection for Metal Chemical Mechanical Planarization

博士 === 國立清華大學 === 動力機械工程學系 === 91 === As the number of metal levels and the wafer size increase, the need for global planarity across the wafer becomes more crucial. Chemical mechanical planarization (CMP) is considered the key technique to achieve this goal. Accurate in-situ endpoint detection and...

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Bibliographic Details
Main Authors: Yun-Liang Huang, 黃允良
Other Authors: Hong Hocheng
Format: Others
Language:en_US
Published: 2002
Online Access:http://ndltd.ncl.edu.tw/handle/48967989073723136534