Investigation of Metallorganic Chemical Vapor Deposited Metal Nitride Films ( TixCyNz, NbNxCyOz,TaxNb(1-x)NyCmOn ) as Diffusion Barriers for the Integration of Low-k Dielectrics
博士 === 國立清華大學 === 材料科學工程學系 === 91 === Metal organic chemical vapor deposition (MOCVD) TixCyNz films were deposited using tetrakis-dimethylamino-titanium (TDMAT) and NH3 as a reaction gas at 325 - 400 oC with Ar/NH3 plasma treatments. Effects of annealing and the subsequently performed Ar/...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24649832997692533147 |