Effect of Thin Film Microstructures on Chalcogenide-Based Phase Change Memory
碩士 === 國立清華大學 === 材料科學工程學系 === 91 === The phase change memory (PCM) is a new kind of memory device that had been studied and noticed in the few years. The phase change memory has a lot of advantages. It possesses very fast programming time, low power consumption, high endurance (more than 1013 ti...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/08377676898227347940 |