The Study of Formation of Nickel Silicides with a Stress Field and a Thin Interlayer of CrOx
碩士 === 國立清華大學 === 材料科學工程學系 === 91 === Metal silicides have been widely used to reduce the resistance of source/drain of microelectronic devices. Among all metal silicides, NiSi is one of the most promising silicides due to good self-aligning properties for ULSI technology. NiSi possesses...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18386011831418136613 |