Hydrogen ion-sensitive field effect transistor with silicon oxycarbide membrane deposited by Inductively Coupled Plasma method
碩士 === 國立清華大學 === 材料科學工程學系 === 91 === In this thesis, the principle of the MOSFET was be used for ISFET. The gate metal of the MOSFET was substituted for the insulator over the Silicon wafer such as silicon oxycarbide，which must be sensitive for the H+ and OH- in the buffer solution. Refe...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07281333990113100268 |