Electrical Properties of TiO2 Thin Films on Si Substrate Prepared by MOCVD
碩士 === 國立中山大學 === 電機工程學系研究所 === 91 === Recently, many dielectric materials have been considered as future promising candidates for a thin dielectric in DRAM storage capacitors. Due to its properties of high dielectric constant (ε// = 170, ε⊥ = 89), high refractive index (~2.5) and high chemical sta...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/84611101409380412219 |