Growth and characterization of wide bandgap GaN semiconductor
博士 === 國立中山大學 === 物理學系研究所 === 91 === Veeco Applied EPI 930 molecular beam epitaxy system equipped with a radio frequency plasma assisted nitrogen source has been introduced and the growth procedure and some specialized measurements are also described. The GaN thin films grown by RF-MBE have been ta...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18469766872758655710 |