Fabrication and Characteristic Analysis of InP/InGaAs Double Heterojunction Bipolar Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 91 === InGaAs spacer layer at base-collector junction of InGaAs/InP double heterojunction bipolar transistor (DHBT) is employed widely for lowering current blocking effect. The thickness of this spacer layer has to be optimized to reduce current blocking while mainta...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/32952729929692679185 |
| Summary: | 碩士 === 國立中央大學 === 電機工程研究所 === 91 ===
InGaAs spacer layer at base-collector junction of InGaAs/InP double heterojunction bipolar transistor (DHBT) is employed widely for lowering current blocking effect. The thickness of this spacer layer has to be optimized to reduce current blocking while maintain a reasonably low VCE offset voltage and high breakdown voltage. Since the offset voltage is partly resultant from the difference between the turn-on voltages of base-emitter and base-collector junction, it is our intention to design a collector structure so that the base- collector junction turn-on voltage can be increased to match that of the base-emitter junction. Parameters, such as layer thickness and doping concentration, are investigated experimentally as well as theoretically.
|
|---|