Fabrication and Characteristic Analysis of InP/InGaAs Double Heterojunction Bipolar Transistors
碩士 === 國立中央大學 === 電機工程研究所 === 91 === InGaAs spacer layer at base-collector junction of InGaAs/InP double heterojunction bipolar transistor (DHBT) is employed widely for lowering current blocking effect. The thickness of this spacer layer has to be optimized to reduce current blocking while mainta...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/32952729929692679185 |