AlN capping layer for ion implantation

• Main Authors: Chi-Kuang Chiu, 邱繼廣
• Other Authors: Gou-Chung Chi
• Format: Others
• Language: zh-TW
• Published: 2003
• Online Access: http://ndltd.ncl.edu.tw/handle/98591244598944506827

碩士 === 國立中央大學 === 物理研究所 === 91 === In this thesis, we deposited an AlN capping layer on GaN to prevent the decomposition of GaN surface. GaN films were grown by MOCVD at about 1050℃. In the thermal annealing process after ion implantation, the temperature higher than 1050℃ will cause the decomposition of GaN surface. By using the Hall measurement, we compared the electrical properties of GaN with AlN capping layer and without capping after thermal annealing. The 28Si+ implantation into p-type GaN followed by thermal annealing will makes the electrical properties transform from p-type to n-type. In the Hall measurement results, the GaN without capping has carrier concentration about 3.73x1013 cm-2, and the GaN with capping layer has carrier concentration about 1.02x1014 cm-2. Activation efficiency was improved from 3.7% to 10%. If the GaN substrates were heated during deposition process, then the adhesion of AlN films on GaN will be better to get improvement for protection on GaN surface.