Local oxidation of GaAS and GaN using atomic force microscope
碩士 === 國立中央大學 === 物理研究所 === 91 === An atomic force microscope (AFM) tip-induced local oxidation have attracted many scientists involved in relative investigations after 1990. It have already become a promising method to fabric nanometer-scale electronic devices. Si is not the only choice of the mate...
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| Format: | Others |
| Language: | zh-TW |
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2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/53247037274282638392 |
| Summary: | 碩士 === 國立中央大學 === 物理研究所 === 91 === An atomic force microscope (AFM) tip-induced local oxidation have attracted many scientists involved in relative investigations after 1990. It have already become a promising method to fabric nanometer-scale electronic devices. Si is not the only choice of the material of the substrate with the advancement of semiconductor technology. In the thesis, we examine tip-induced local oxidation on GaAs and GaN and study how such factors as various form of voltage, amplitude of cantilever, and temperature affect its size. Experiments show the different behavior of varying the negative bias voltage and frequency of AC voltage and we build a simple model to explain how these parameters bring about the different results. The increase of compressed value of the cantilever make the size of the oxide raise and the increase of temperature of the sample make the size of the oxide diminish.
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