Local oxidation of GaAS and GaN using atomic force microscope

碩士 === 國立中央大學 === 物理研究所 === 91 === An atomic force microscope (AFM) tip-induced local oxidation have attracted many scientists involved in relative investigations after 1990. It have already become a promising method to fabric nanometer-scale electronic devices. Si is not the only choice of the mate...

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Bibliographic Details
Main Authors: Wei-Chih Chen, 陳威志
Other Authors: Cheng-Hsun Nien
Format: Others
Language:zh-TW
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/53247037274282638392