DESIGN OPTIMIZATION ON ESD PROTECTION CIRCUITS WITH GATE-COUPLED TECHNIQUE

碩士 === 國立交通大學 === 電資學院學程碩士班 === 91 === Gate-coupled technique has been used to lower device breakdown voltage and to ensure uniform ESD (ElectroStatic Discharge) current distribution in deep-submicron CMOS on-chip ESD protection circuit. But, the gate-coupled design has also been confirme...

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Bibliographic Details
Main Authors: Ming Dar Yang, 楊明達
Other Authors: Prof. Ming-Dou Ker
Format: Others
Language:en_US
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/59768132531868343218