Integration and Study of Porous Low Dielectric Constant Material and Metal Interconnect
碩士 === 國立交通大學 === 機械工程系 === 91 === As the rapid development of ULSI, the IC device is moving into the sub-micron scale. The performance of integrated circuits will be significantly limited by the interconnect RC time delay . To alleviate this impact, using ultra low dielectric constant to replace t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15360851952774931680 |