Electrical Characterizations of InAs/InGaAs Dots in Well structure

Electrical Characterizations of InAs/InGaAs Dots in Well structure

碩士 === 國立交通大學 === 電子物理系 === 91 === The electric properties of InAs/InGaAs dots in well structures are investigated by current-voltage (I-V), capacitance-voltage (C-V), admittance and deep-level transient spectroscopy. Three samples with different InAs deposition thickness of 1.98, 2.31 an...

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Bibliographic Details
Main Authors:	Chien-Kuo Wang, 王建國
Other Authors:	Jenn-Fang Chen
Format:	Others
Language:	zh-TW
Published:	2003
Online Access:	http://ndltd.ncl.edu.tw/handle/59186198697305579252

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