Electrical Characterizations of InAs/InGaAs Dots in Well structure
碩士 === 國立交通大學 === 電子物理系 === 91 === The electric properties of InAs/InGaAs dots in well structures are investigated by current-voltage (I-V), capacitance-voltage (C-V), admittance and deep-level transient spectroscopy. Three samples with different InAs deposition thickness of 1.98, 2.31 an...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59186198697305579252 |