The Ni:Si/Ge characteristics and their applications on OEIC
博士 === 國立交通大學 === 電子工程系 === 91 === In this work, the techniques of room temperature crystallization, advanced silicide, and SiGe/Si MOS tunneling diode have been studied. The first topic was regarding the crystallization. Electron-beam crystallization at room temperature for poly-Si thin-film transi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88755164751895825056 |