The Investigation of Data Retention in a Direct Tunneling Regime Gate Oxide SONOS Memory Cell
碩士 === 國立交通大學 === 電子工程系 === 91 === SONOS (Silicon Oxide Nitride Oxide Silicon) will become the main stream of nonvolatile memory products because of its simplicity in structure and scalable by comparing with conventional floating gate cells. For the scaling of SONOS memory, the endurance...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39027079769327552161 |