Effects of Forming Gas Annealing on the Recovery of Radiation Damaged Power MOSFETs

碩士 === 國立交通大學 === 電子工程系 === 91 === This thesis study investigates the radiation effect of power MOSFETs as well as the forming gas annealing effect on the recovery of the radiation damaged devices. It is found that Co-60 irradiation resulted in threshold voltage (Vth) shift toward the neg...

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Bibliographic Details
Main Authors: Lee-Shian Jeng, 鄭禮賢
Other Authors: Mao-Chieh Chen
Format: Others
Language:en_US
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/95883309951536144600