Study on integration of Oxygen-doped SiC Dielectric Barrier Layer
碩士 === 國立交通大學 === 電子工程系 === 91 === As the device dimensions continue to shrink, interconnection delay becomes a limiting factor for increasing devices speed. Since interconnection delay is the product of the resistance in metal interconnection and the capacitance between the metal lines,...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2003
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00645733258310152098 |