Reliability Study of Dynamic Thrshold Voltage SOI P-MOSFETs with Various Structures at Different Temperatures

碩士 === 國立交通大學 === 電子工程系 === 91 === In this study, the reliability of p-channel dynamic threshold voltage MOSFETs (DTMOS) is characterized. With increasing demands in high-speed and low-power digital electronics in recent years, DTMOS with its lower threshold voltage, higher transconductan...

Full description

Bibliographic Details
Main Authors: Chun-Yang Huang, 黃仲揚
Other Authors: Tiao-Yuan Huang
Format: Others
Language:en_US
Published: 2003
Online Access:http://ndltd.ncl.edu.tw/handle/01910434163399624163

Similar Items