Study on the Low Temperature Poly-Si Thin Film Transistors with Lightly Doped Drain Structures and ICP Plasma Oxidation Gates
博士 === 國立交通大學 === 電子工程系 === 91 === The main topics of this thesis can be divided into two categories; (1) low temperature poly-Si TFTs with lightly doped drain structure; (2) low temperature poly-Si TFTs using ICP plasma oxidation gate dielectric layer. The maxima process temperature of device fabri...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | zh-TW |
Published: |
2003
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Online Access: | http://ndltd.ncl.edu.tw/handle/61638566520981753826 |